l/^roaucti, line. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . silico n pn p powe r transisto r telephone : (973 ) 376-292 2 (212 ) 227-600 5 fax : (973 ) 376-896 0 2sa130 1 descriptio n ? hig h powe r dissipatio n ? collector-emitte r breakdow n voltage - : v (b r)ceo=-160v(min ) ? complemen t t o typ e 2sc328 0 application s ? powe r amplifie r application s ? recommen d fo r so w hig h fidelit y audi o frequenc y amplifie r outpu t stag e application s absolut e maximu m ratings(ta=251 ) symbo l vcb o vce o veb o i c i b p c t j tst g paramete r collector-bas e voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s bas e current-continuou s collecto r powe r dissipatio n @ t 0 =25' c junctio n temperatur e storag e temperatur e rang e valu e -16 0 -16 0 - 5 -1 2 -1. 2 12 0 15 0 -55-15 0 uni t vv v aa w r ' c pi n 1.bas e i 2 . collecto r 3 emitte r : 2 , to-3p l packag e \ ? ? - ? * b ??? ? ( , . 1 * " ' 1 r . * v -* ? *f2p l ? - g di m a b c d e f g h j k n p 0 r u w i 2 a > k i m m wi n 25.s o 19.8 0 4.5 0 0.9 0 2.8 0 24 0 10.8 0 3,1 0 0.5 0 20..0 0 3.9 0 2.4 0 3.1 0 1,9 0 3.9 0 2.9 0 ma x 26.5 0 20.2 0 5.5 0 1.1 0 3.2 0 2.6 0 11.0 0 3.3 0 0.7 0 21.0 0 4,5 0 2.6 0 3.s o 2,6 0 4.1 0 3,2 5 ~ c -? n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s \vithou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e lim e o f goin g 1 0 press . 1 louever , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n. i semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n pn p powe r transisto r 2sa130 1 electrica l characteristic s t c =25 c unles s otherwis e specifie d symbo l v(br)ce o vce(sat ) vbe(oh ) icb o ieb o hpe- 1 hfe- 2 co b f i paramete r collector-emitte r breakdow n voltag e collector-emitte r saturation voltag e base-emitte r o n voltag e collecto r cutof f curren t emitte r cutof f curren t d c curren t gai n d c curren t gai n outpu t capacitanc e current-gainbandwidt h produc t condition s lc = -50ma ; le = 0 lc = -8.0a ; i b = -0.8 a lc = -6 a ; v ce = -5 v v c b=-160v;i e = 0 v eb = -5v ; l c = 0 lc = -1a ; v ce = -5 v lc = -6a ; v ce = -5 v l e =0;v c b=-10v;f = 1.0mh z lc=-1a;v ce =-5 v mi n -16 0 5 5 3 5 typ . 48 0 3 0 ma x -2. 5 -1. 5 - 5 - 5 16 0 uni t vv v m a u a p f mh z e- i classification s r 55-11 0 o 80-16 0 downloaded from: http:///
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